| PART |
Description |
Maker |
| MX25L1605D MX25L3205D |
(MX25L1605D - MX25L6405D) 16M-BIT [x 1 / x 2] CMOS SERIAL FLASH
|
Macronix International
|
| MC-4516CD646 |
16M-Word By 64-BIT Dynamic RAM Module(16M×64位动态RAM模块)
|
NEC Corp.
|
| IBM13M16734BCD |
16M x 72 1 Bank Registered/Buffered SDRAM Module(16M x 72 1组寄缓冲同步动态RAM模块)
|
IBM Microeletronics
|
| M366S1723CTS |
16M x 64 SDRAM DIMM based on 16M x 8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Serial Presence Detect
|
Samsung Electronic
|
| LH28F160BJHE-TTL90 LHF16J04 |
16M-BIT ( 1Mbit x16 / 2Mbit x8 )Boot Block Flash MEMORY(16M 1Mx16 / 2Mx8 )Boot Block 闪速存储器)
Flash Memory 16M (1M × 16/2M × 8)
|
Sharp Corporation
Sharp Electrionic Components
|
| V436416S04VTG |
3.3 Volt 16M x 64 High Performance PC100 and 100 MHZ SDRAM Module with Unbuffered(3.3V 16M*64位高性能无缓冲器PC10000MHZSDRAM模块) 3.3伏特16米x 64高性能00兆赫PC100的内存模块，缓冲.3 1,600 * 64位高性能无缓冲器PC100的和100MHZSDRAM模块
|
Mosel Vitelic, Corp.
|
| HYB3165405ATL-60 HYB3165405ATL-50 HYB3165405ATL-40 |
16M x 4 Bit 4k EDO DRAM
16M x 4 Bit 8k EDO DRAM
16M x 4-Bit Dynamic RAM (4k & 8k Refresh, EDO-Version)
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| S29GL512N S29GL256N90FFI010 S29GL256N90FFIV20 S29G |
MirrorBit Flash Family 16M X 16 FLASH 3V PROM, 100 ns, PBGA64
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBitProcess Technology 32M X 16 FLASH 3V PROM, 100 ns, PBGA64
JT 13C 13#22M PIN PLUG 16M X 16 FLASH 3V PROM, 100 ns, PDSO56
MirrorBit Flash Family 16M X 16 FLASH 3V PROM, 80 ns, PDSO56
MirrorBit Flash Family MirrorBit闪存系列
Replaced by PTB48520W : 16M X 16 FLASH 3V PROM, 100 ns, PBGA64
JT 13C 13#22D SKT PLUG
|
Spansion, Inc.
Spansion Inc.
ETC
|
| UPD4416001G5-A17-9JF UPD4416001G5-A15-9JF |
16M-bit(16M-word x 1-bit) Fast SRAM
|
NEC
|
| 69F1608RPFH 69F1608RPFK |
128 Megabit (16M x 8-Bit) Flash Memory Module 16M X 8 FLASH 5V PROM MODULE, 35 ns, DFP24
|
Maxwell Technologies, Inc
|
